Image generating method, image generating device, image generating program, and storage medium

ABSTRACT

An image generating device is an apparatus for acquiring an image which shows a direction of an electric current flowing through a semiconductor device. The image generating device comprises a signal application unit configured to apply a stimulation signal to the semiconductor device, a magnetic detection unit configured to output a detection signal based on a magnetism generated by an application of the stimulation signal, and an image generation unit configured to generate phase image data comprising a phase component which indicates a phase difference based on the phase difference between the detection signal and a reference signal which is generated based on the stimulation signal and generate an electric current direction image which shows the direction of the electric current based on the phase image data.

TECHNICAL FIELD

The present invention relates to an image generating method, an imagegenerating device, an image generating program, and a recording medium.

BACKGROUND ART

In the related art, a detection device which detects an intensity of anelectric current or a portion through which an electric current flows ina semiconductor device in order to inspect a semiconductor device isknown. For example, Patent Literature 1 discloses a non-destructiveanalysis device which detects magnetism induced by an electric currentgenerated from a semiconductor device using a magnetic detector(superconducting quantum interference device: SQUID). In thenon-destructive analysis device, the semiconductor device is irradiatedwith a modulation beam of which the intensity is modulated by amodulation signal synchronized with a reference signal. In addition, aphase difference image is obtained on the basis of a detection signalwhich is output from the magnetic detector and the reference signal. Inaddition, Non Patent Literature 1 discloses a method of obtaining anelectric current density in a plane direction from a magnetic fluxdensity which is detected by a magnetic detector such as a SQUID. NonPatent Literature 1 proposes a method of obtaining the electric currentdensity from a magnetic field by formulating a relation between anelectric current and the magnetic field using the Biot-Savart law.

CITATION LIST Patent Literature

-   [Patent Literature 1] Japanese Unexamined Patent Publication No.    2005-134196

Non Patent Literature

-   [Non Patent Literature] Bradley J. Roth, Nestor G Sepulveda, and    John P. Wikswo, Jr., “Using a magnetometer to image a    two-dimensional current distribution,” J. Appl. Phys., 65 (1), 1    Jan. 1989.

SUMMARY OF INVENTION Technical Problem

However, Patent Literature 1 merely distinguishes a difference between agood product and a defective product with a high sensitivity using thephase difference image. In addition, Non Patent Literature 1 merelydiscloses a theoretical formula for obtaining the electric currentdensity from the magnetic field. As described above, neither literaturediscloses a method or the like of obtaining a direction of an electriccurrent flow in a semiconductor device. Therefore, an aspect of thepresent invention is to provide an image generating method and an imagegenerating device capable of generating an electric current directionimage which is an image showing a direction of an electric current in asemiconductor device.

Solution to Problem

An image generating method according to an aspect is an image generatingmethod of generating an image which shows a direction of an electriccurrent flowing through a semiconductor device. The image generatingmethod includes a step of applying a stimulation signal to thesemiconductor device, a step of detecting a magnetism generated by theapplication of the stimulation signal and outputting a detection signal,a step of generating phase image data including a phase component whichindicates a phase difference based on the phase difference between thedetection signal and a reference signal which is generated based on thestimulation signal, and a step of generating an electric currentdirection image which shows the direction of the electric current basedon the phase image data.

In addition, an image generating device according to an aspect is animage generating device for acquiring an image which shows a directionof an electric current flowing through a semiconductor device. The imagegenerating device includes a signal application unit configured to applya stimulation signal to the semiconductor device, a magnetic detectionunit configured to output a detection signal based on a magnetismgenerated by the application of the stimulation signal, and an imagegeneration unit configured to generate phase image data including aphase component which indicates a phase difference based on the phasedifference between the detection signal and a reference signal which isgenerated based on the stimulation signal and generate an electriccurrent direction image which shows the direction of the electriccurrent based on the phase image data.

In addition, an image generating program according to an aspect is aprogram which causes a computer to execute a process of acquiring animage showing a direction of an electric current flowing through asemiconductor device by applying a stimulation signal to thesemiconductor device. The image generating program causes a computer tofunction as a phase image data generation unit configured to generatephase image data including a phase component which indicates a phasedifference from the phase difference between a detection signal based ona magnetism generated by the application of the stimulation signal and areference signal generated based on the stimulation signal, and an imagegeneration unit configured to generate an electric current directionimage which shows the direction of the electric current based on thephase image data. In addition, a recording medium according to anotheraspect is a computer-readable recording medium which records the imagegenerating program.

According to the image generating method, the image generating device,and the image generating program, the magnetism is generated by thestimulation signal applied to the semiconductor device. In addition, thephase image data including the phase component showing the phasedifference is generated based on phase difference between the referencesignal generated based on the stimulation signal and the detectionsignal based on the magnetism. Since the phase difference changes with adirection of a magnetic field, the phase image data includes informationon the direction of the magnetic field. Since the direction of themagnetic field is determined by the direction of the electric current,it is possible to determine the direction of the electric current basedon the phase image data. Therefore, it is possible to generate the imagewhich shows the direction of the electric current by using thedetermined direction of the electric current.

In an embodiment, the electric current direction image may be configuredto show the direction of the electric current in a plurality of colorsset according to the direction. With this configuration, it is possibleto visually ascertain the position and the direction of the electriccurrent easily.

In an embodiment, the plurality of colors may be configured to havedifferent colors set with respect to each of at least four angle rangesdivided to correspond to the direction of the electric current. Ingeneral, an electric current path in the semiconductor device is oftendesigned in an X-axis direction and a Y-axis direction in a plan view.In this case, the directions of the electric current are four in an Xdirection, a −X direction, a Y direction, and a −Y direction. With theat least four different colors of the above described configuration, itis easy to distinguish the four directions.

In an embodiment, the step of generating the electric current directionimage may include a step of changing a correspondence relationshipbetween the direction of the electric current and the plurality ofcolors. For example, the image generation unit may have a color tableincluding data of the plurality of colors and an angle table includingdata of the angle ranges divided to correspond to the direction of theelectric current. The image generation unit may be configured to changea correspondence relationship between the color table and the angletable. With this configuration, for example, even in a case in which adirection of an obtained image is tilted, it is possible to easilyadjust a color arrangement.

In an embodiment, the image generating method may further include a stepof generating data in which magnetism direction data based on the phaseimage data is added to intensity image data indicating an intensity ofthe magnetism generated from the detection signal and generating anelectric current intensity image showing an intensity of the electriccurrent based on the data. In this case, the image generating method mayfurther include a step of generating an electric current image showingthe intensity and the direction of the electric current based on theelectric current intensity image and the electric current directionimage. In this case, the image generation unit may be configured togenerate data in which magnetism direction data based on the phase imagedata is added to intensity image data indicating an intensity of themagnetism generated from the detection signal and generate an electriccurrent intensity image showing an intensity of the electric currentbased on the data. The intensity of the magnetism corresponds to themagnitude of the electric current. Therefore, it is possible to expressthe magnitude of the electric current in an image by adding themagnetism direction data to the intensity image data.

In an embodiment, the step of generating the electric current directionimage showing the direction of the electric current may include a stepof generating data in which magnetism direction data based on the phaseimage data is added to intensity image data indicating an intensity ofthe magnetism generated from the detection signal and generating anelectric current direction image based on the corresponding data. Inthis case, the image generation unit may generate the data in which themagnetism direction data based on the phase image data is added to theintensity image data indicating the intensity of the magnetism generatedfrom the detection signal and generate the electric current directionimage based on the corresponding data. It is possible to obtain theelectric current direction image showing the direction of the electriccurrent more accurately by using the data including both the phasecomponent and information on the intensity of the magnetism.

In an embodiment, the magnetic detection unit may include a light sourcewhich generates light, a magneto-optical crystal which is disposed toface the semiconductor device, an irradiation optical system whichirradiates the magneto-optical crystal with the light and guides lightreflected from the magneto-optical crystal, and a light detector whichdetects the light reflected from the magneto-optical crystal and outputsthe detection signal.

Advantageous Effects of Invention

According to the image generating method and the image generatingdevice, it is possible to generate the electric current direction imagewhich is the image showing the direction of the electric current in thesemiconductor device.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a configuration diagram of an inspection apparatus accordingto a first embodiment of the present invention.

FIG. 2 is a diagram for describing a light splitting optical system inthe inspection apparatus of FIG. 1.

FIG. 3 is a diagram for describing a phase difference.

FIG. 4 is a diagram for describing an outline of a procedure forobtaining an electric current image.

FIG. 5 is an image showing an example of an intensity image.

FIG. 6 is an image showing an example of a phase image.

FIG. 7 is a diagram for describing a procedure for acquiring an electriccurrent intensity image and an electric current direction image.

FIG. 8 is a diagram for describing a procedure for acquiring an electriccurrent intensity image and an electric current direction image.

FIG. 9 is an image showing an example of the electric current intensityimage.

FIG. 10 is an image showing an example of the electric current directionimage.

FIG. 11 is a diagram for describing color assignment in the electriccurrent direction image.

FIG. 12 is a table showing a relationship between an angle and a color.

FIG. 13 is a diagram for describing contrast adjustment of the electriccurrent direction image by the electric current intensity image.

FIG. 14 is an image showing an example of an electric current image.

FIG. 15 is a diagram illustrating an example of a color arrangementadjustment screen.

FIG. 16 is a diagram for describing a procedure for acquiring theelectric current direction image.

FIG. 17 is an image showing an example of the electric current intensityimage.

FIG. 18 is an image showing an example of the electric current image.

FIG. 19 is a diagram for describing a procedure for acquiring theelectric current intensity image.

FIG. 20 is a diagram for describing a procedure for acquiring theelectric current intensity image.

FIG. 21 is an image showing an example of the electric current intensityimage.

FIG. 22 is a diagram illustrating an example of a recording medium whichrecords an image generating program.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the drawings. In addition, in the drawings, thesame reference numerals are given to the same or equivalent parts andrepetitive descriptions are omitted.

As illustrated in FIG. 1, for example, an image generating device 1according to the present embodiment may be used in inspecting asemiconductor device D, such as specifying an abnormality occurrenceportion in the semiconductor device D. The image generating device 1obtains the direction of an electric current flowing through thesemiconductor device D by applying a stimulation signal to thesemiconductor device D and generates an image showing the direction ofthe electric current flowing through the semiconductor device D.

As the semiconductor device D, there are an integration circuit having aPN junction such as a transistor (for example, small scale integration(SSI), medium scale integration (MSI), large scale integration (LSI),very large scale integration (VLSI), ultra large scale integration(ULSI), giga scale integration (GSI)), high current/high voltage MOStransistors and bipolar transistors, and a power semiconductor device(power device). In addition, the semiconductor device D may be apackage, a complex substrate, or the like including a semiconductordevice.

A tester unit 11 (signal application unit) is electrically connected tothe semiconductor device D via a device control cable. The tester unit11 is operated by a power source (not shown) and applies a predeterminedmodulation electric current signal (stimulation signal) to thesemiconductor device D. In the semiconductor device D, a modulationmagnetic field is generated according to the modulation electric currentsignal. By detecting light of which the intensity is modulated accordingto the modulation electric field by a light detector 22 which will bedescribed later, it is possible to detect light modulated at a specificfrequency. In addition, lock-in detection may be performed by generatinglight from a light source 13 (described later) according to thedetection frequency while applying the modulation electric currentsignal from the tester unit 11 to the semiconductor device D, and inthis case, it is possible to improve S/N. The tester unit 11 iselectrically connected to a frequency analysis unit 12 via a timingsignal cable. In addition, a modulation voltage signal may be applied asthe stimulation signal. Furthermore, instead of the tester unit, a pulsegenerator or the like may be used as the signal application unit.

The image generating device 1 includes the light source 13. The lightsource 13 is operated by a power source (not shown), and generates andoutputs CW light or pulse light to be irradiated to an MO crystal 18(magneto-optical crystal) which will be described later and thesemiconductor device D. The light output from the light source 13 may beincoherent light or coherent light such as laser light. As the lightsource 13 which outputs the incoherent light, a super luminescent diode(SLD), an amplified spontaneous emission (ASE), a light emitting diode(LED), or the like may be used. In a case in which the light output fromthe light source 13 is the incoherent light, it is possible to reduceinterference noise generated between reflected light in the MO crystal18 and reflected light in the semiconductor device D. The reflectedlight in the MO crystal 18 includes both reflected light on a lightincident surface of the MO crystal 18 and reflected light on a lightreflection surface of the MO crystal 18. In addition, an influence ofthe reflected light on the light incident surface of the MO crystal 18may be reduced by carrying out antireflection processing on the lightincident surface.

In addition, as the light source 13 which outputs the coherent light, asolid laser light source, a semiconductor laser light source, or thelike may be used. The wavelength of the light output from the lightsource 13 is 530 nm or more, preferably 1064 nm or more. The lightoutput from the light source 13 is guided to a light splitting opticalsystem 14 via a polarization preserving single mode optical coupler (notshown) and a polarization preserving single mode optical fiber for probelight. Details of the light splitting optical system 14 will bedescribed later. The light guided from the light source 13 to the lightsplitting optical system 14 is further guided to an irradiation opticalsystem including an optical scanner 15 and an objective lens 16. Theoptical scanner 15 and the objective lens 16, which are irradiationoptical systems, irradiate the MO crystal 18 with the light output fromthe light source 13.

The optical scanner 15 scans an irradiation spot on the light incidentsurface of the MO crystal 18. More specifically, the optical scanner 15is controlled by a computer 24 which will be described later, and thusthe optical scanner 15 scans the irradiation spot. For example, theoptical scanner 15 is configured by an optical scan element such as agalvanometer mirror, a micro electro mechanical system (MEMS) mirror, apolygon mirror, or the like.

The objective lens 16 condenses the light guided by the optical scanner15 to the MO crystal 18. The objective lens 16 is configured to becapable of switching a low magnification objective lens and a highmagnification objective lens by a turret (not shown) or the like. Themagnification of the low magnification objective lens is, for example, 5times, and the magnification of the high magnification objective lensis, for example, 50 times. An objective lens drive unit 17 is connectedto the objective lens 16. The objective lens drive unit 17 is moved inthe optical axis direction OD of the light from the light source 13, andthus it is possible to adjust the focal position of the objective lens16.

The MO crystal 18 is disposed to face the semiconductor device D. The MOcrystal 18 changes the refractive index according to the electric fieldgenerated in the semiconductor device D by the magneto-optical effect,and changes a polarization state (polarization direction) of theincident light. For example, in a case in which a modulation electriccurrent signal is applied to the semiconductor device D at the time of afailure of the semiconductor device D, or the like, an electric currentpath through which a leakage current according to a failure locationflows occurs in some cases. In this case, in the location where theleakage electric current occurs, a magnetic field different from that ofa position where the leakage electric current does not occur isgenerated. The MO crystal 18 emits reflected light of which thepolarization direction changes according to such a change of themagnetic field. The difference of the polarization direction of thereflected light is expressed as a difference of the intensity of thelight acquired by the light detector 22 which will be described later.The reflected light in the MO crystal 18 is returned to the lightsplitting optical system 14 via the objective lens 16 and the opticalscanner 15 and guided to the light detector 22 via an optical fiber forreturned light. With this configuration, a magnetic detection unit fordetecting magnetism is configured.

A holder 19 for holding the MO crystal 18 is connected to the MO crystal18 via a flexible member 21. For example, the flexible member 21 is aring shape elastic member including rubber, a spring, or the like. Inaddition, the flexible member 21 may be a member of which the shape isdeformed, and may not necessarily be an elastic member. The flexiblemember 21 is fixed to the MO crystal 18 to cover at least a part of anouter edge of the MO crystal 18 in a view from the optical axisdirection OD. The flexible member 21 is fixed to a light incidentsurface side of the MO crystal 18. In addition, the holder 19 is, forexample, a ring shape and is fixed to the flexible member 21 to cover anouter edge of the flexible member 21 in a view from the optical axisdirection OD. Therefore, one surface of the flexible member 21 is fixedto the MO crystal 18 and another surface of the flexible member 21 isfixed to the holder 19. Since the flexible member 21 of the ring shapecovers the outer edge of the MO crystal 18 and the holder 19 of the ringshape covers the outer edge of the flexible member 21, in the view fromthe optical axis direction OD, an opening for receiving the light fromthe objective lens 16 is formed on the light incident surface of the MOcrystal 18. A holder drive unit 20 is connected to the holder 19.

The holder drive unit 20 is moved in the optical axis direction OD tomove the holder 19 in the optical axis direction OD. Since the holderdrive unit 20 is moved in the optical axis direction OD, the distancebetween the holder 19 and the semiconductor device D is shortened, andthe MO crystal 18 is pressed to the semiconductor device D. That is, theMO crystal 18 is able to be brought into contact with the semiconductordevice D. The light irradiation on the MO crystal 18 is performed in astate in which the MO crystal 18 is in contact with the semiconductordevice D. In addition, the light irradiation on the MO crystal 18 is notlimited to being performed in the state in which the MO crystal 18 is incontact with the semiconductor device D, and may be performed in a statein which there is a predetermined interval between the MO crystal 18 andthe semiconductor device D. In addition, the objective lens drive unit17 and the holder drive unit 20 may be configured as an integrated type.In this case, the integrated type configuration may have a mechanism forindividually moving the objective lens 16 and the holder 19.

The light detector 22 detects the reflected light from the MO crystal 18in contact with the semiconductor device D according to the irradiatedlight and outputs a detection signal. For example, the light detector 22is a photodiode, an avalanche photodiode, a photomultiplier tube, anarea image sensor, or the like. The light detector 22 includes at leastone detector and detects the intensity of the light input to thedetector.

Here, the light splitting optical system 14 will be described withreference to FIG. 2. The light splitting optical system 14 includescollimators 141 and 146, a shutter 142, a polarization beam splitter(PBS) 143, and a faraday rotator (FR) 144. As illustrated in FIG. 2, ina case in which the MO crystal 18 is irradiated with the light from thelight source 13 via the optical scanner 15, the light from the lightsource 13 is first input to the shutter 142 via the collimator 141. Theshutter 142 may be an element capable of controlling ON/OFF of thelight. In addition, the light output from the shutter 142 is input tothe PBS 143. The PBS 143 is set to transmit light having a polarizationcomponent of 0 degrees and reflect light having a polarization componentof 90 degrees. In addition, the PBS 143 is set appropriately for thepolarization of the light from the shutter 142. Therefore, the PBS 143transmits the light from the shutter 142. The light having thepolarization component of 0 degrees transmitted through the PBS 143 isinput to the FR 144 of which a polarization plane of incident light istilted (rotated) 22.5 degrees, and a polarization component thereof is22.5 degrees. The light transmitted through the FR 144 is input to theoptical scanner 15 as the light having the polarization component of22.5 degrees. The MO crystal 18 is irradiated with the light.

The polarization plane of the reflected light from the MO crystal 18rotates according to the magneto-optical effect (Kerr effect, Faradayeffect, or the like) proportional to the magnetic field (magnetic fieldintensity) which is generated by the modulation electric current signalapplied to the semiconductor device D. The reflected light is tilted22.5 degrees in the polarization plane by the FR 144 and input to thePBS 143. The reflected light is divided into light having a polarizationcomponent of 90 degrees and light having a polarization component of 0degrees by the PBS 143. The light having the polarization component of90 degrees is reflected by the PBS 143 and input to the light detectorof the light detector 22 via the collimator 146. As described above, thelight detector 22 detects the change in the polarization plane accordingto the magnetic field (magnetic field intensity) generated in thesemiconductor device D as the light intensity, and outputs the detectionsignal of the intensity (amplitude) according to the light intensity toan amplifier 23. In addition, although the configuration in which onlyone PBS 143 is provided as the light splitting optical system 14 andonly the light having the polarization component of 90 degrees isdetected among linearly polarized light which is orthogonal has beendescribed, the present invention is not limited thereto. That is, thelight splitting optical system 14 may further include an FR whichinclines the polarization plane of the incident light 45 degrees betweenthe PBS 143 and the FR 144, a PBS which transmits light having apolarization component of 45 degrees and reflects light having apolarization component of 135 degrees, and a collimator, and may captureand perform difference detection on the both orthogonal linearlypolarized light, that is, the light having the polarization component of0 degrees and the light having the polarization component of 90 degrees.In addition, a half mirror may be used as the light splitting opticalsystem 14.

Returning to FIG. 1, the amplifier 23 amplifies the detection signaloutput by the light detector 22 and outputs the amplified detectionsignal. The amplified detection signal is input to the frequencyanalysis unit 12. As the frequency analysis unit 12, a lock-inamplifier, a spectrum analyzer, a digitizer, a Cross Domain Analyzer(registered trademark), a network analyzer, a digitizer, or the like isused. The frequency analysis unit 12 extracts a measurement frequencycomponent in the amplified detection signal. For example, themeasurement frequency is set on the basis of a modulation frequency ofthe modulation electric current signal applied to the semiconductordevice D. In addition, the frequency analysis unit 12 acquires areference signal of which the period is equal to that of the modulationelectric current signal applied to the semiconductor device D. Forexample, the reference signal is output from the tester unit 11 andinput to the frequency analysis unit 12.

The frequency analysis unit 12 derives a phase difference between thedetection signal from which the measurement frequency component isextracted and the acquired reference signal. As described above, theamplitude of the detection signal changes according to the magneticfield (magnetic field intensity) generated in the semiconductor deviceD. In addition, the frequency analysis unit 12 may specify the phasedifference between the detection signal and the reference signal on thebasis of the amplitude of the detection signal. Here, the phasedifference between the detection signal related to the reflected lightof an electric current path location and the reference signal is aspecific value. Specifically, the specific value is substantially one oftwo values according to whether direction in which the magnetic fieldgenerated according to the electric current penetrates the MO crystal 18is positive or negative. As illustrated in FIG. 3, the period of thereference signal is equal to that of the stimulation signal by thefrequency analysis unit 12. In addition, the phase difference(hereinafter referred to as electric current phase difference in somecases) between the detection signal of the electric current pathlocation and the reference signal is constant during a plurality ofperiods. Specifically, the electric current phase difference is a valueobtained by adding a phase difference θ1 between the reference signaland the stimulation signal and a phase difference θ2 between thestimulation signal and the detection signal. The phase difference θ1 maybe changed according to a setting of the frequency analysis unit 12which generates the reference signal. In order to more easily obtain theelectric current phase difference, it is preferable that the phase ofthe reference signal be equal to that of the stimulation signal and thephase difference θ1 be 0. The phase difference θ2 is one of two valueswhich differ by 180 degrees (π) according to whether the direction inwhich the magnetic field generated according to the electric currentpenetrates the MO crystal is positive or negative. That is, the phasedifference θ2 between the detection signal of the electric current pathlocation where the magnetic field direction is positive and thestimulation signal differs from the phase difference θ2 between thedetection signal of the electric current path location where themagnetic field direction is negative and the stimulation signal by 180degrees (π). On the other hand, the phase difference between thedetection signal of a location other than the electric current pathlocation in the semiconductor device D and the reference signal is not aspecific value but is a random value. The frequency analysis unit 12outputs an analysis signal including information indicating thespecified phase difference to the computer 24 (image generation unit).In addition, the frequency analysis unit 12 outputs the detection signalof an intensity (amplitude) according to the light intensity, which isinput from the amplifier 23, to the computer 24.

The computer 24 is, for example, a PC or the like. An input device 26such as a keyboard or a mouse to which a measurement condition and thelike are input by the user and a display device 25 such as a display fordisplaying a measurement result and the like to the user are connectedto the computer 24. The computer 24 includes a central processing unit(CPU) which is a processor, a random access memory (RAM) or a read onlymemory (ROM) which is a recording medium, and an input/output module.The computer 24 is electrically connected (coupling) to the light source13, the optical scanner 15, the objective lens drive unit 17, the testerunit 11, the light detector 22, the frequency analysis unit 12, and thelike via the input/output module, and performs a function of controllingsuch elements by the CPU.

The computer 24 generates an amplitude image, a phase image, an electriccurrent intensity image, an electric current direction image, and anelectric current image by executing an image generating program P1(described later), which is recorded in the recording medium, by theCPU. As illustrated in FIG. 4, the computer 24 first generates theamplitude image (intensity image) and the phase image on the basis ofmeasurement data (step S1). In the present embodiment, the measurementdata includes data of the detection signal detected from the lightdetector 22 and data of the analysis signal output from the frequencyanalysis unit 12. In addition, the amplitude image shows the intensity(magnetic flux density) of the magnetic field and the phase image showsthe direction of the magnetic field. Next, the computer 24 generates theelectric current intensity image showing the intensity (electric currentdensity) of the electric current on the basis of the amplitude image andthe phase image (step S2). For example, in the electric currentintensity image, the intensity of the electric current is shown bybrightness (luminance). In addition, the computer 24 generates theelectric current direction image showing the direction of the electriccurrent on the basis of the amplitude image and the phase image (stepS3). For example, in the electric current direction image, the directionof the electric current is shown by a color. Next, the computer 24generates the electric current image showing the intensity and thedirection of the electric current on the basis of the electric currentintensity image and the electric current direction image (step S4).

A method of generating the amplitude image, the phase image, theelectric current intensity image, and the electric current directionimage, and the electric current image will be specifically describedbelow.

[Generation of Amplitude Image]

The computer 24 maps the light intensity on each irradiation spot on thebasis of the light intensity (amplitude) of the detection signal andinformation on the irradiation spot on the light incident surface of theMO crystal 18 and generates the amplitude image. The amplitude image isan image obtained by mapping the light intensity on a predeterminedluminance value according to the light intensity. Therefore, althoughthe amplitude image shows the intensity of the magnetic field (magneticflux density), the amplitude image does not show the direction of themagnetic field. Regarding the correspondence relationship between thelight intensity and the luminance value, for example, in a case in whichthe light intensity is 0, the luminance value is set to 0 a.u., and in acase in which the light intensity is the maximum, the luminance value isset to 32000 a.u. That is, as illustrated in FIG. 5, in the amplitudeimage, the larger the intensity of the magnetic field is, the closer thecolor of the amplitude image is to white, and the smaller the intensityof the magnetic field is, the closer the color of the amplitude image isto black. The computer 24 generates amplitude image data including thelight intensity corresponding to each irradiation spot. In the amplitudeimage data, the light intensity corresponding to each irradiation spotis mapped on the position (reference pixel) of the image in which theposition of each irradiation spot is considered.

[Generation of Phase Image]

The computer 24 maps the phase component on each irradiation spot on thebasis of the phase difference (phase component) included in the analysissignal and information on the irradiation spot on the light incidentsurface of the MO crystal 18 and generates the phase image. The phaseimage is an image obtained by mapping the phase difference on apredetermined luminance value according to the phase difference.Regarding the correspondence relationship between the phase differenceand the luminance value, for example, in a case in which the phasedifference is −π, the luminance value is set to 0 a.u., in a case inwhich the phase difference is 0, the luminance value is set to 16000a.u., and in a case in which the phase difference is +π, the luminancevalue is set to 32000 a.u. That is, as illustrated in FIG. 6, in thephase image, the phase image is colored black when the phase differenceis closer to −π, and the phase image is colored white when the phasedifference is closer to π. The computer 24 generates phase image dataincluding a phase component corresponding to each irradiation spot. Inthe phase image data, the phase component corresponding to eachirradiation spot is mapped on the position (reference pixel) of theimage in which the position of each irradiation spot is considered.

[Generation of Electric Current Intensity Image and Electric CurrentDirection Image]

In the present embodiment, the electric current intensity image and theelectric current direction image are generated on the basis of theBiot-Savart law shown as expression (1).

$\begin{matrix}\left\lbrack \text{Math.~~1} \right\rbrack & \; \\{{B(r)} = {\frac{\mu_{0}}{4\pi}{\int{\frac{{J\left( r^{\prime} \right)} \times \left( {r - r^{\prime}} \right)}{{{r - r^{\prime}}}^{3}}d^{3}r^{\prime}}}}} & (1)\end{matrix}$

As illustrated in FIG. 7, a principle of generating the electric currentintensity image and the electric current direction image using asemiconductor device having the thickness d as a model will bedescribed. In the present example, a surface of the semiconductor deviceis defined as an xy plane and a thickness direction of the semiconductordevice is defined as a z-axis (device surface is set to 0). The magneticflux density at the position r(x, y, z) in a space is set to B(r). Theposition r is a constant distance in the z-axis direction from thesurface of the device and the distance is set to be sufficiently smallerthan the thickness d of the device. In addition, the electric currentdensity at the point r′(x′, y′, 0) on the device surface influencing themagnetic field at the position r is set to J(r′). In this case, themagnetic flux density B(r), the electric current density J(r′), and thedistance r-r′ from the position r to the point r′ become as illustratedin FIG. 7. In this model, only the z-axis magnetic flux at the positionr is detected as the detection signal. Therefore, the Biot-Savart law isdeveloped only in the z-axis direction and thus expression (2) isobtained.

$\begin{matrix}{\mspace{79mu} \left\lbrack \text{Math.~~2} \right\rbrack} & \; \\{{B_{z}\left( {x,y} \right)} = {\frac{\mu_{0}d}{4\pi}{\int_{- \infty}^{\infty}{\int_{- \infty}^{\infty}{\frac{{{J_{x}\left( {x^{\prime},y^{\prime}} \right)} \cdot \left( {y - y^{\prime}} \right)} - {{J_{y}\left( {x^{\prime},y^{\prime}} \right)} \cdot \left( {x - x^{\prime}} \right)}}{\left( {\left( {x - x^{\prime}} \right)^{2} + \left( {y - y^{\prime}} \right)^{2} + z^{2}} \right)^{3/2}}{dx}^{\prime}{dy}^{\prime}}}}}} & (2)\end{matrix}$

On the other hand, in a case in which it is considered that the electriccurrent is stationary and there is no divergence or extinction, the sumof a surface electric current gradients is 0, and expression (3) andexpression (4) are obtained.

$\begin{matrix}\left\lbrack \text{Math.~~3} \right\rbrack & \; \\{{\nabla{\cdot J}} = {{\frac{\partial J_{x}}{\partial x} + \frac{\partial J_{y}}{\partial y} + \frac{\partial J_{z}}{\partial z}} = 0}} & (3) \\\left\lbrack \text{Math.~~4} \right\rbrack & \; \\{{{{uj}_{x}\left( {u,v} \right)} + {{vj}_{y}\left( {u,v} \right)}} = 0} & (4)\end{matrix}$

u: angle frequency of x direction

v: angle frequency of y direction

j_(x) (u, v): spectrum of x direction

j_(y) (u, v): spectrum of y direction

Therefore, it is possible to calculate the electric current densityJ(r′) by using expressions (2) and (4) and the measured magnetic fluxdensity B(r). Hereinafter, a specific calculation flow will bedescribed. As illustrated in FIG. 8, first, the computer 24 obtains theamplitude image as the magnetic flux density B_(z) (absolute value) inthe z-axis direction (step S11). Next, the computer 24 adds positive andnegative signs to the amplitude image using the generated phase imageand constructs a magnetic flux density B_(z)′ including information onthe direction of the magnetic flux (step S12). In the presentembodiment, for example, as shown in expression (5), in a case in whichthe amplitude value in the reference pixel is set to A_(p) and the phasevalue is set to P_(p), the positive and negative signs are added to theamplitude image of the corresponding reference pixel as “positive” in aregion where the phase component of the phase image ranges from 0 to πand “negative” in a region where the phase component of the phase imageranges from −π to 0.

[Math. 5]

sign(P _(p))A _(p) +i·0=sign(P _(p))A _(p)  (5)

sign(arg):1(arg≥0),−1(arg<0)

Next, the computer 24 performs Fourier-transform the constructedmagnetic flux density B_(z)′ and obtains a two-dimensional spectrum(step S13). In addition, by expression (4), the spectrum obtained instep S13 is decomposed into a spectrum j_(x)(u, v) in the x-axisdirection and a spectrum j_(y)(u, v) in the y-axis direction (step S14).Next, the obtained spectrum j_(x)(u, v) and spectrum j_(y)(u, v) in they-axis direction are performed inverse-Fourier-transform and theelectric current density J_(x) in the x-axis direction and the electriccurrent density J_(y) in the y-axis direction are obtained (step S15).Next, the real part of the obtained electric current density J_(x) andthe real part of the obtained electric current density J_(y) aresubstituted into expression (6), and thus the electric current intensityimage data is obtained (step S17). In the electric current intensityimage data, the position information of each reference pixel and theelectric current intensity at the corresponding position are linked. Inaddition, the real part of the obtained electric current density J_(x)and the real part of the obtained electric current density J_(y) aresubstituted into expression (7), and thus the electric current directionimage data is obtained (step S18). In the electric current directionimage data, the position information of each reference pixel and theelectric current direction at the corresponding position are linked. Theelectric current direction is defined in a range of −π to π on the basisof an arbitrary direction on the plane in the reference pixel (in theembodiment, the right direction in the drawn image) set as a 0 degreedirection.

$\begin{matrix}\left\lbrack \text{Math.~~6} \right\rbrack & \; \\\sqrt{J_{x}^{2} + J_{y}^{2}} & (6) \\\left\lbrack \text{Math.~~7} \right\rbrack & \; \\{\tan^{- 1}\left( \frac{{Re}\left( J_{y} \right)}{{Re}\left( J_{x} \right)} \right)} & (7)\end{matrix}$

In addition, in step S12, an I image (cosine image) and a Q image (sineimage) may be constructed by the amplitude image and the phase image andmay be performed Fourier-transform as B_(z)′. That is, in a case inwhich the amplitude value is set to A_(p) and the phase value is set toP_(p) in the reference pixel, the X image is calculated by expression(8) and the Q image is calculated by expression (9). The Fouriertransform is a reversible mapping from a complex number to a complexnumber (so-called orthogonal transformation). Therefore, I_(p)+iQ_(p) isset an input of Fourier transform as B_(z)′. As described above, byconstructing B_(z)′, it is possible to hold information on a time phase.Therefore, it is possible to detect a phase delay.

[Math. 8]

I _(p) =A _(p) cos P _(p)  (8)

−π≤P _(p)≤π

[Math. 9]

Q _(p) =A _(p) sin P _(p)  (9)

−π≤P _(p)≤π

The computer 24 maps the value of the electric current intensity imagedata for each reference pixel on the basis of the obtained electriccurrent intensity image data and position information of the referencepixel and generates the electric current intensity image. The electriccurrent intensity image of the present embodiment is an image obtainedby mapping the electric current intensity with a predetermined luminancevalue according to the electric current intensity. With regard to thecorrespondence relationship between the electric current intensity andthe luminance value, for example, in a case in which the luminance valueis expressed with 16 bits, when the electric current intensity is 0, theluminance value is 0 a.u. and when the electric current intensity is themaximum, the luminance value is 65535 a.u. As illustrated in FIG. 9, inthe electric current intensity image, the color of the electric currentintensity image is close to white when the intensity (electric currentdensity) of the electric current is higher.

The computer 24 maps the electric current direction image data for eachreference pixel on the basis of the obtained electric current directionimage data and position information of the reference pixel and generatesthe electric current direction image. The electric current directionimage (refer to FIG. 10) of the present embodiment is an image obtainedby mapping the electric current direction to a predetermined coloraccording to the electric current direction. The correspondencerelationship between the electric current direction and the color isdetermined by assigning different colors to angle ranges divided into apredetermined range. In the present embodiment, for example, asillustrated in FIG. 11, the different colors are assigned to the angleranges divided into four ranges. In this example, “RED” is assigned to arange in which the electric current direction is from −π/4 to π/4.“YELLOW” is assigned to a range in which the electric current directionis from π/4 to 3π/4. “GREEN” is assigned to a range in which theelectric current direction is from 3π/4 to π and −π3/4 to −π. Inaddition, “CYAN” is assigned to a range in which the electric currentdirection is from −3π/4 to −π/4. In this example, the colors indicatingthe directions opposite to each other are complementary colors (RED andGREEN, and YELLOW and CYAN). For example, the computer 24 may have atable in which the electric current direction and the color correspondto each other as illustrated in FIG. 12(a). The table includes an angletable in which the electric current direction is defined as an angle anda color table in which the colors corresponding to the angle ranges aredefined. For example, the angle table and the color table correspond oneto one. In this case, the computer 24 is able to determine the colorcorresponding to the electric current direction by referring to thetable.

For example, in a case in which the electric current in the referencepixel flows to the right in the image, the reference pixel is mappedwith “RED” corresponding to the electric current direction 0. In a casein which the electric current in the reference pixel flows upward in theimage, the reference pixel is mapped with “YELLOW” corresponding to theelectric current direction π/2. In a case in which the electric currentin the reference pixel flows to the left in the image, the referencepixel is mapped with “GREEN” corresponding to the electric currentdirection π or −π. In a case in which the electric current in thereference pixel flows downward in the image, the reference pixel ismapped with “CYAN” corresponding to the electric current direction −π/2.As illustrated in FIG. 10, in the electric current direction image, aregion colored YELLOW and CYAN extends vertically in the image. Inaddition, a region colored RED and GREEN extends horizontally in theimage. In addition, since a part seen as a marble shape is a regionwhere an electric current path is not present, the part is randomlycolored RED, YELLOW, GREEN, and CYAN.

[Generation of Electric Current Image]

The computer 24 generates the electric current image (electric currentimage data) showing the intensity and the direction of the electriccurrent on the basis of the obtained electric current intensity image(electric current intensity image data) and the electric currentdirection image (electric current direction image data). For example,the electric current image is generated by synthesizing the electriccurrent intensity image and the electric current direction image. In thegeneration of the electric current image, contrast enhancement by theluminance value of the electric current intensity image is added to thecolor forming the electric current direction image. That is, the colorof the electric current direction image has the brightness according tothe luminance value of the electric current intensity image. Forexample, the computer 24 refers to the color in the reference pixel fromthe electric current direction image and generates the brightness in thereference pixel from the luminance value of the electric currentintensity image. For example, the brightness is generated by associatingthe maximum luminance value (65535) in the electric current intensityimage with the maximum brightness (255) of the color and the minimumluminance value (0) with the minimum brightness (0). For example, asillustrated in FIG. 13, in a case in which the color of the referencepixel is “YELLOW” the brightness corresponding to the luminance value ofthe reference pixel is assigned. In this example, values of R and Gwhich are color components constituting “YELLOW” in RGB are valuesaccording to the luminance values. That is, the values of R and G in thereference pixel are values obtained by multiplying the ratio of theluminance value of the reference pixel with respect to the maximumluminance value and 255. The electric current image is generated bymapping all of the reference pixels by the color to which the contrastenhancement is added. The electric current image may be displayed on thedisplay device 25. In addition, in the example described above, themaximum luminance value in the electric current intensity imagecorresponds to the maximum brightness of the color and the minimumluminance value corresponds to the minimum brightness of the color, butthe present invention is not limited thereto. The user may freely changethe correspondence according to a luminance distribution of the electriccurrent intensity image so that the recognition can be more easilyperformed by the user. For example, in a case in which the luminance ofthe electric current intensity image is more distributed in the maximumluminance value, the luminance value greater than the minimum luminancevalue may correspond to the minimum brightness. In addition, forexample, in a case in which the luminance of the electric currentintensity image is more distributed in the minimum luminance value, theluminance value less than the maximum luminance value may correspond tothe maximum brightness.

In the electric current image illustrated in FIG. 14, the color of aregion where the electric current density is small (a part colored blackin FIG. 9) in the electric current intensity image (refer to FIG. 9) isclose to black. In addition, in a region where the electric currentdensity is large (a part colored white in FIG. 9), the color of theelectric current direction image is easily recognized. Therefore, it iseasy to check the electric current flowing in the vertical direction(CYAN and YELLOW) and the electric current flowing in the horizontaldirection (RED and GREEN) in the image, in comparison with the electriccurrent direction image.

In the present embodiment, it is possible to change (adjust) a colorarrangement before and after generating the electric current image. Asillustrated in FIG. 15, for example, the computer 24 displays anoperation icon 202 on the display device 25 together with the generatedelectric current image 201. In the operation icon 202 of the illustratedexample, four different arrow images 202 a, 202 b, 202 c, and 202 c aredrawn in a circle. The arrow images 202 a, 202 b, 202 c, and 202 c areeach colored differently. In addition, each of the arrow images 202 a,202 b, 202 c, and 202 c shows a different direction. The respectivecolors and directions in the arrow images 202 a, 202 b, 202 c, and 202 ccorrespond to the relationship between the color and the electriccurrent direction in the electric current direction image. Therefore, ina case of the correspondence relationship illustrated in FIG. 11 andFIG. 12(a), the arrow image 202 a indicating right is colored RED, thearrow image 202 b indicating up is colored YELLOW, the arrow image 202 cindicating left is colored GREEN and the arrow image 202 d indicatingdown is colored CYAN. In addition, in the operation icon 202, a line 203dividing the inside of the circle into the angle range of the electriccurrent direction corresponding to each arrow image is drawn.

In a case in which there is an input (for example, an operation by amouse or an input of a rotation angle) from the input device 26, thecomputer 24 rotates and displays the operation icon 202 according to theinput operation. In addition, the computer 24 changes the correspondencerelationship between the electric current direction and the color tocorrespond to the input operation. For example, in a case in which aninitial state is a correspondence relationship illustrated in FIG.12(a), it is assumed that the operation icon 202 is rotated clockwise 90degrees (−π/2) by the operation of the mouse. In this case, asillustrated in FIG. 12(b), the table is updated to a state in which thecolor table is shifted −90 degrees with respect to the angle table. Inaddition, the computer 24 generates the electric current direction imageby referring to the updated table. Therefore, the electric current image201 changed to the updated color arrangement is displayed on the displaydevice 25. The rotation operation of the operation icon 202 may beperformed in a state in which the electric current intensity image orthe electric current direction image is displayed on the display device25. In addition, the electric current image 201 may be rotated by theinput from the input device 26. In this case, the table may be updatedaccording to the rotation angle of the electric current image 201. Forexample, in a case in which the electric current image 201 is rotatedcounterclockwise 90 degrees, the table is updated to the tableillustrated in FIG. 12(b).

Next, a modification example related to the generation of the electriccurrent direction image and the electric current intensity image will bedescribed. Instead of the method of generating the electric currentdirection image and the electric current intensity image in theembodiment described above, a method in the following modificationexample may be used. In addition, in the present embodiment, not onlymay the electric current image be generated by the method exemplified inthe present specification but an electric current direction image and anelectric current intensity image may also be generated by anothermethod.

Modification Example 1 Related to Generation of Electric CurrentDirection Image

The phase value in the phase image has a negative value on the rightside of the reference pixel with respect to the electric currentdirection of the reference pixel and has a positive value on the leftside of the reference pixel. Therefore, it is possible to obtain theelectric current direction image by obtaining a gradient vector withrespect to the direction of the negative phase value from the positivephase value in the phase image and rotating the gradient vector 90degrees. As illustrated in FIG. 16(a), in the modification example, aphase image P is scanned by a window region W of a predetermined size.In addition, the electric current direction at the center (referencepixel) of the window region is calculated within the range of the windowregion W. In the window region W, as illustrated in FIG. 16(b), thewindow region W is divided into halves on the left and right sides andgradient vectors of the left and right are calculated. In a case inwhich the sum of the phase values of the left half is set to L and thesum of the phase values of the right half is set to R, a gradient x isobtained by expression (10).

[Math. 10]

x=R−L  (10)

In addition, as illustrated in FIG. 16(c), the window region W isdivided into upper and lower halves and upper and lower gradient vectorsare calculated. In a case in which the sum of the phase values of theupper half is set to T and the sum of the phase values of the lower halfis set to B, the gradient y is obtained by expression (11).

[Math. 11]

y=B−T  (11)

A two-dimensional gradient vector (x, y) is obtained from expressions(10) and (11). In the present modification example, in order to increasethe accuracy of the calculated electric current direction image, acalculation is also performed in the diagonal direction.

As illustrated in FIG. 16(d), the window region W is divided into halvesin the upper left and the lower right and a gradient vector directedfrom the upper left to the lower right is calculated. In a case in whichthe sum of the phase values of the upper left half is set to LT and thesum of the phase values of the lower right half is set to RB, a gradientu is obtained by expression (12).

[Math.12]

u=RB−LT  (12)

In addition, as illustrated in FIG. 16(e), the window region W isdivided into halves in the lower left and the upper right and a gradientvector directed from the lower left to the upper right is calculated. Ina case in which the sum of the phase values of the lower left half isset to LB and the sum of the phase values of the upper right half is setto RT, a gradient v is obtained by expression (13).

[Math. 13]

v=LB−RT  (13)

In addition, a two-dimensional gradient vector (u, v) is obtained fromexpressions (12) and (13). A two-dimensional gradient vector (u′, v′) isobtained by rotating the gradient vector (u, v) 45 degrees. A gradientvector (x+u′, y+v′) in the reference pixel is obtained by thetwo-dimensional gradient vector (u′, v′) and the two-dimensionalgradient vector (x, y).

In addition, the gradient vector (x+u′, y+v′) is calculated as shown inexpression (7). Since the gradient vector has a deviation of 90 degreesfrom the electric current direction, the electric current direction isobtained by expression (14). It is possible to obtain the electriccurrent direction image by plotting the obtained electric currentdirection for each reference pixel.

$\begin{matrix}\left\lbrack \text{Math.~~14} \right\rbrack & \; \\{{\tan^{- 1}\left( \frac{y + v^{\prime}}{x + u^{\prime}} \right)} \pm \frac{\pi}{2}} & (14)\end{matrix}$

Modification Example 1 Related to Generation of Electric CurrentIntensity Image

In this modification example, the electric current intensity image isgenerated on the basis of the Biot-Savart law similarly to theembodiment described above. Differently from the embodiment describedabove, in this modification example, a residual difference is minimizedby a gradient method instead of using expression (4). That is, values ofappropriate electric current densities J_(x) and J_(y) are substitutedwith respect to a formula derived from the Biot-Savart law and themagnetic flux density is calculated. The calculated magnetic flux iscompared with the actual value and the electric current densities J_(x)and J_(y) of which the difference between the calculated magnetic fluxand the actual value is the minimum are obtained. As the gradientmethod, a steepest descent method, a conjugate gradient method, or thelike may be used. Hereinafter, a specific method will be described.

First, an amplitude image to which the Biot-Savart law may be applied(hereinafter referred to as “amplitude image modification b”) isgenerated from the amplitude image and the phase image obtained by themeasurement of the semiconductor device D. In a case in which theamplitude value in the reference pixel p=(x, y) is set to a_(p) and thephase value in the reference pixel p=(x, y) is set to θ_(p), theamplitude image modification b_(p) in the reference pixel p is obtainedby expression (15).

[Math. 15]

b _(p) =a _(p) cos(θ_(p)+α)  (15)

In addition, the electric current direction obtained by “modificationexample 1 related to generation of electric current direction image”described above is set to φ and the electric current direction in thereference pixel p is set to φ_(p). In addition, the amplitude image ofthe electric current density in the reference pixel p is set to q_(p)and initialized with q_(p)=1.0.

In addition, convolution is performed in an appropriate window region bythe Biot-Savart law (expression (16)) indicated by the sum and theelectric current density J_(x) and J_(y) indicated by expressions (17)and (18).

$\begin{matrix}\left\lbrack \text{Math.~~16} \right\rbrack & \; \\{{B_{z}\left( {x,y} \right)} = {\sum\limits_{y^{\prime}}{\sum\limits_{x^{\prime}}\frac{{{J_{x}\left( {x^{\prime},y^{\prime}} \right)} \cdot \left( {y - y^{\prime}} \right)} - {{J_{y}\left( {x^{\prime},y^{\prime}} \right)} \cdot \left( {x - x^{\prime}} \right)}}{\left( {\left( {x - x^{\prime}} \right)^{2} + \left( {y - y^{\prime}} \right)^{2} + z^{2}} \right)^{3/2}}}}} & (16) \\\left\lbrack \text{Math.~~17} \right\rbrack & \; \\{{J_{x}\left( {p = \left( {x^{\prime},y^{\prime}} \right)} \right)} = {q_{p}\cos \; \phi_{p}}} & (17) \\\left\lbrack \text{Math.~~18} \right\rbrack & \; \\{{J_{y}\left( {p = \left( {x^{\prime},y^{\prime}} \right)} \right)} = {q_{p}\sin \; \phi_{p}}} & (18)\end{matrix}$

In a case in which the operation is set to A, it is possible to returnto an inverse matrix problem. That is, it is possible to obtain theelectric current intensity by obtaining q in expression (19). Inaddition, it is possible to obtain the electric current intensity imageby plotting an absolute value of the obtained q as electric currentintensity image data in the reference pixel. As illustrated in FIG. 17,in the electric current intensity image, similarly to the embodimentdescribed above, the color of the electric current intensity image isclose to white when the intensity of the electric current (electriccurrent density) is higher. In addition, FIG. 18 is an electric currentimage obtained by synthesizing the present modification example andmodification example 1 related to the generation of the electric currentdirection image described above. In the electric current image,similarly to the electric current image illustrated in FIG. 14,vertically flowing electric currents (CYAN and YELLOW) and horizontallyflowing electric currents (RED and GREEN) may be checked.

[Math. 19]

Aq=b  (19)

Modification Example 2 Related to Generation of Electric CurrentIntensity Image

In this modification example, the electric current intensity image isgenerated on the basis of a spatial distribution of the magnetic fluxdensity by the Biot-Savart law. As illustrated in FIG. 19(a), accordingto the spatial distribution of the magnetic flux density, the magneticflux density is 0 directly above the position where the electric currentflows and the maximum value and the minimum value are formed at theperiphery (vicinity) of the position where the electric current flows.In the amplitude image obtained by observing the magnetic flux density,the magnetic flux density is obtained by an absolute value. In thiscase, when the maximum value of the electric current density in theposition where the electric current flows in the vicinity thereof is setto Amax, the electric current density in the reference pixel R is adifference between the maximum value Amax and the amplitude value of thereference pixel R. Therefore, in this modification example, asillustrated in FIG. 20, the amplitude image A is scanned by the windowregion W of a predetermined size. The absolute value of the differencebetween the amplitude value in the reference pixel R (the center of thewindow region W) and the maximum amplitude value (Amax) within thewindow region W is the electric current intensity in the referencepixel. It is possible to obtain the electric current intensity image byplotting the obtained value as the electric current intensity image datain the reference pixel. As illustrated in FIG. 21, in the electriccurrent intensity image, similarly to the embodiment described above,the color of the electric current intensity image is close to white whenthe intensity of the electric current (electric current density) ishigher.

Each process of generating the amplitude image, the phase image, theelectric current intensity image, the electric current direction image,and the electric current image in the embodiment and each modificationexample described above may be executed by the computer 24 using, forexample, an image generating program P1. As illustrated in FIG. 22, theimage generating program P1 is recorded in a program recording region ofa recording medium 50. For example, the recording medium 50 isconstituted of a recording medium such as a CD-ROM, a DVD, and a ROM, ora semiconductor memory. The image generating program P1 includes a mainmodule M1, an amplitude image data generation module M2, a phase imagedata generation module M3, an electric current intensity image datageneration module M4, an electric current direction image datageneration module M5, and an electric current image data generationmodule M6.

The main module M1 is a part generally controlling the image generationprocess, and causes the computer 24 to execute the amplitude image datageneration module M2, the phase image data generation module M3, theelectric current intensity image data generation module M4, the electriccurrent direction image data generation module M5, and the electriccurrent image data generation module M6. The computer 24 functions as anamplitude image data generation unit for generating the amplitude image(amplitude image data) by executing the amplitude image data generationmodule M2. In addition, the computer 24 functions as a phase image datageneration unit for generating the phase image (phase image data) byexecuting the phase image data generation module M3. The computer 24functions as an electric current intensity image data generation unitfor generating the electric current intensity image (electric currentintensity image data) by executing the electric current intensity imagedata generation module M4. The computer 24 functions as an electriccurrent direction image data generation unit (image generation unit) forgenerating the electric current direction image (electric currentdirection image data) by executing the electric current direction imagedata generation module M5. The computer 24 functions as an electriccurrent image data generation unit (image generation unit) forgenerating the electric current image (electric current image data) byexecuting the electric current image data generation module M6. Inaddition, the image generating program P1 may be provided as a computerdata signal superimposed on a carrier wave via a communication network.

In the image generating method (image generating device 1) describedabove, magnetism is generated by the stimulation signal applied to thesemiconductor device D. In addition, the phase image data including thephase component indicating the phase difference is generated on thebasis of the phase difference between the reference signal generated onthe basis of the stimulation signal and the detection signal based onthe magnetism. Since the phase difference changes with the direction ofthe magnetic field, the phase image data includes information on thedirection of the magnetic field. Since the direction of the magneticfield is determined by the direction of the electric current, it ispossible to determine the direction of the electric current on the basisof the phase image data. Therefore, it is possible to generate the imageshowing the direction of the electric current using the determineddirection of the electric current.

In addition, since the electric current direction image shows thedirection of the electric current with a plurality of colors set(arranged) according to the direction, it is possible to visuallyascertain the position and the direction of the electric current easily.In addition, the plurality of colors are different colors (RED, YELLOW,GREEN, and CYAN) set for (assigned to) each of the four angle ranges (90degrees) divided to correspond to the direction of the electric current.The electric current path in the semiconductor device D is oftendesigned in the X-axis direction and the Y-axis direction to beorthogonal in a plan view. In this case, the number of directions of theelectric current is four, including the X direction, the −X direction,the Y direction, and the direction. Therefore, it is easy to distinguishthe four directions because there are four different colors.

In addition, in the step of generating the electric current directionimage, the correspondence relationship between the direction of theelectric current and the plurality of colors may be changed. In theembodiment described above, the computer 24 includes the color tablehaving color data of four colors and the angle table having data of anangle range divided into the four different angle ranges. In addition,the correspondence relationship between the color table and the angletable may be changed. According to this configuration, it is possible toeasily adjust the color arrangement. In addition, even in a case inwhich the direction of the obtained image is tilted, it is possible toadjust the color arrangement according to the tilt by arbitrarilyshifting setting the correspondence relationship between the color tableand the angle table.

In addition, data in which magnetism direction data based on the phaseimage data is added to the intensity image data showing the intensity ofthe magnetism and generated from the detection signal is generated, andthe electric current intensity image showing the intensity of theelectric current is generated on the basis of the corresponding data. Inaddition, the electric current image showing the intensity and thedirection of the electric current is generated on the basis of theelectric current intensity image and the electric current directionimage. The intensity of the magnetism corresponds to the magnitude ofthe electric current. Therefore, it is possible to express the magnitudeand the direction of the electric current as the image by adding themagnetism direction data (electric current direction image) to theintensity image data (electric current intensity image).

Although an embodiment of the present invention has been describedabove, the present invention is not limited to the above describedembodiment.

For example, although the reference signal has been described as beingoutput from the tester unit 11, the present invention is not limitedthereto, and the reference signal may be output from the semiconductordevice D. In this case, the semiconductor device D may be directlyconnected to the frequency analysis unit 12 via the device controlcable. In addition, the reference signal may be input to the frequencyanalysis unit 12 from the semiconductor device D via the tester unit 11.The reference signal according to the corresponding stimulation signalis output from the semiconductor device D to which the stimulationsignal is applied and the corresponding reference signal is input to thefrequency analysis unit 12.

In addition, although an example of the color arrangement in which thefour different colors correspond to the four different angle ranges hasbeen shown, the present invention is not limited thereto. The colors maybe fewer than four colors or five or more colors. In addition, thedivided angle range may vary with the colors. For example, the colorarrangement may be performed is six colors of three colors each having arange of 90 degrees and three colors each having a range of 30 degrees.In addition, the relationship between the angle and the color indicatingthe electric current direction may be set as a gradation like a huecircle. In addition, the relationship between the angle and the colorarrangement may be freely changeable by input means.

In addition, although an example in which the direction is indicated bythe color has been shown, the present invention is not limited thereto.For example, an arrow indicating the electric current direction may beplotted with respect to the obtained electric current intensity image.In this case, the arrow may be plotted for each adjacent region havingthe same electric current direction. In addition, the arrow may beplotted with respect to only the region having the electric currentdensity equal to or greater than a predetermined magnitude and the sizeof the arrow may correspond to the magnitude of the electric currentintensity. In addition, for example, instead of a color, the electriccurrent direction may be expressed by a dithering pattern or a geometricshape.

REFERENCE SIGNS LIST

1 . . . image generating device, 11 . . . tester unit (signalapplication unit), 13 . . . light source, 15 . . . optical scanner(irradiation optical system), 18 . . . MO crystal (magneto-opticalcrystal), 22 . . . light detector, 24 . . . computer (image generationunit)

1. A method for generating an image which shows a direction of anelectric current flowing through a semiconductor device, the methodcomprising: applying a stimulation signal to the semiconductor device;irradiating a magneto-optical crystal disposed to face the semiconductordevice with light; detecting light reflected from the magneto-opticalcrystal and outputting a detection signal; generating phase image databased on a phase difference between the detection signal and a referencesignal which is generated based on the stimulation signal; generating anelectric current direction image based on magnetism direction data in athickness direction of the semiconductor device, derived from the phaseimage data, generating an electric current intensity image by adding themagnetism direction data to intensity image data generated from thedetection signal; and generating an electric current image which showsintensity and the direction of the electric current with a plurality ofcolors set according to the direction based on the electric currentintensity image and the electric current direction image. 2-15.(canceled)
 16. The method of claim 1, wherein the plurality of colorsare different colors set with respect to at least four angle rangesdivided to correspond to the direction of the electric current.
 17. Themethod of claim 1, wherein generating the electric current directionimage comprises changing a correspondence relationship between thedirection of the electric current and the plurality of colors.
 18. Themethod of claim 1, wherein the plurality of colors indicate directionsof electric current that are opposite to each other as complementarycolors.
 19. The method of claim 1, wherein generating the electriccurrent image includes setting a correspondence relationship between thedirection of the electric current and the plurality of colors as atleast one of a gradation and a hue circle.
 20. The method of claim 1,wherein the electric current intensity image and the electric currentdirection image are generated on the basis of the Biot-Savart law. 21.An image generating device for acquiring an image which shows adirection of an electric current flowing through a semiconductor device,the image generating device comprising: a signal applicator configuredto apply a stimulation signal to the semiconductor device; a lightsource configured to generate light; a magneto-optical crystal which isdisposed to face the semiconductor device; an irradiation optical systemconfigured to irradiate the magneto-optical crystal with the light andguide light reflected from the magneto-optical crystal; a light detectorconfigured to detect the light reflected from the magneto-opticalcrystal and output a detection signal; and a processor configured to:generate phase image data based on a phase difference between thedetection signal and a reference signal which is generated based on thestimulation signal, generate an electric current direction image basedon magnetism direction data in a thickness direction of thesemiconductor device, derived from the phase image data, generate anelectric current intensity image by adding the magnetism direction datato intensity image data generated from the detection signal, andgenerate an electric current image which shows intensity and thedirection of the electric current with a plurality of colors setaccording to the direction based on the electric current intensity imageand the electric current direction image.
 22. The image generatingdevice of claim 21, wherein the plurality of colors is different colorsset with respect to at least four angle ranges divided to correspond tothe direction of the electric current.
 23. The image generating deviceof claim 21, wherein the processor is further configured to receive acolor table comprising data of the plurality of colors and an angletable comprising data of the angle ranges divided to correspond to thedirection of the electric current, and wherein the processor is furtherconfigured to change a correspondence relationship between the colortable and the angle table.
 24. The image generating device of claim 21,wherein the plurality of colors indicate directions of electric currentthat are opposite to each other as complementary colors.
 25. The imagegenerating device of claim 21, wherein the processor is furtherconfigured to set a correspondence relationship between the direction ofthe electric current and the plurality of colors as at least one of agradation and a hue circle.
 26. The image generating device of claim 21,wherein the processor is further configured to generate the electriccurrent intensity image and the electric current direction image on thebasis of the Biot-Savart law.
 27. A non-transitory computer-readablerecording medium recording an image generating program for causing acomputer to execute a process of acquiring an image showing a directionof an electric current flowing through a semiconductor device byapplying a stimulation signal to the semiconductor device, the imagegenerating program causing a computer to: generate phase image databased on the phase difference between a detection signal based on amagnetism generated by application of the stimulation signal and areference signal generated based on the stimulation signal; generate anelectric current direction image based on magnetism direction data in athickness direction of the semiconductor device, derived from the phaseimage data; generate an electric current intensity image by adding themagnetism direction data to intensity image data generated from thedetection signal; and generate an electric current image which shows theintensity and the direction of the electric current with a plurality ofcolors set according to the direction based on the electric currentintensity image and the electric current direction image.